Senior/Principal Power Device R&D Engineer
Team
– R&D Engineering Location
– Cambridge Contract
– Permanent, Full time About CGD A spin-out of the Cambridge University, Cambridge GaN Devices (CGD) is a fabless semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible. The global power semiconductor market is expected to exceed $50BN. CGD has successfully secured projects funded by iUK, BEIS, and EU (Penta). The technical and commercial expertise of the CGD team combined with an extensive track record in the power electronics market has been fundamental in early market adoption of our proprietary technology. The Opportunity CGD is looking for a Senior/Principal Power Device R&D Engineer to join our growing engineering team. You will be the technical lead of development projects of the newest GaN power devices and ICs. These projects are highly multi-disciplinary. You will work with project managers, power device engineers, analog IC designers, packaging engineers, and more. You will be involved in R&D projects through their full life cycle from concept to market entry and beyond. Main Responsibilities Technical, multidisciplinary leadership of GaN power IC development projects Liaise with CGD experts in Analog IC Design, Reliability, Power Device Design, Testing, and Operations Work with Project Managers and technical teams to develop new products, meeting time, cost, and performance targets Understand the critical path of projects from a technical point of view and identify topics early to resolve with the multidisciplinary team for best-in-class R&D execution Manage product requirements and specifications in collaboration with Marketing, Business Development, and Application Engineering Feasibility studies of novel GaN IC products Essential Master’s degree in a relevant engineering or science subject Solid experience of developing semiconductor devices, preferably power devices Semiconductor industry experience Expert in the development and design of at least one of the following: Power device packaging; Analog ICs; Power semiconductors; GaN devices; Semiconductor testing and reliability Experience in project management Good communication and presentation skills A mindset for precise and high-quality results An eye for detail Desirable Knowledge of power semiconductor device physics, preferably GaN Skilled in power electronics Experience with semiconductor failure analysis Experience as system or device technical lead Project management qualifications Benefits Excellent salary Share options scheme available Pension scheme (6% Company contribution) Life Assurance (3x Salary) BUPA Cash Plan (Level 3) Flexible working options Annual leave allowance of 33 days Training and development We believe in equal opportunities We are committed to providing equal opportunities to all current and prospective employees regardless of age, disability, sex, sexual orientation, pregnancy and maternity, race or ethnicity, religion or belief, gender identity, or marriage and civil partnership.
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– R&D Engineering Location
– Cambridge Contract
– Permanent, Full time About CGD A spin-out of the Cambridge University, Cambridge GaN Devices (CGD) is a fabless semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible. The global power semiconductor market is expected to exceed $50BN. CGD has successfully secured projects funded by iUK, BEIS, and EU (Penta). The technical and commercial expertise of the CGD team combined with an extensive track record in the power electronics market has been fundamental in early market adoption of our proprietary technology. The Opportunity CGD is looking for a Senior/Principal Power Device R&D Engineer to join our growing engineering team. You will be the technical lead of development projects of the newest GaN power devices and ICs. These projects are highly multi-disciplinary. You will work with project managers, power device engineers, analog IC designers, packaging engineers, and more. You will be involved in R&D projects through their full life cycle from concept to market entry and beyond. Main Responsibilities Technical, multidisciplinary leadership of GaN power IC development projects Liaise with CGD experts in Analog IC Design, Reliability, Power Device Design, Testing, and Operations Work with Project Managers and technical teams to develop new products, meeting time, cost, and performance targets Understand the critical path of projects from a technical point of view and identify topics early to resolve with the multidisciplinary team for best-in-class R&D execution Manage product requirements and specifications in collaboration with Marketing, Business Development, and Application Engineering Feasibility studies of novel GaN IC products Essential Master’s degree in a relevant engineering or science subject Solid experience of developing semiconductor devices, preferably power devices Semiconductor industry experience Expert in the development and design of at least one of the following: Power device packaging; Analog ICs; Power semiconductors; GaN devices; Semiconductor testing and reliability Experience in project management Good communication and presentation skills A mindset for precise and high-quality results An eye for detail Desirable Knowledge of power semiconductor device physics, preferably GaN Skilled in power electronics Experience with semiconductor failure analysis Experience as system or device technical lead Project management qualifications Benefits Excellent salary Share options scheme available Pension scheme (6% Company contribution) Life Assurance (3x Salary) BUPA Cash Plan (Level 3) Flexible working options Annual leave allowance of 33 days Training and development We believe in equal opportunities We are committed to providing equal opportunities to all current and prospective employees regardless of age, disability, sex, sexual orientation, pregnancy and maternity, race or ethnicity, religion or belief, gender identity, or marriage and civil partnership.
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